PtTe2 interface engineering for enhanced near‐infrared photoresponse in black silicon photodetectors
Abstract Highly responsive near‐infrared (NIR) photodetectors (PDs) are increasingly required for advanced photoelectric systems. While silicon‐based detectors benefit from mature fabrication and CMOS compatibility, their performance is limited by the intrinsic bandgap of 1.12 eV, which leads to wea...
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| Автори: | , , , , , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley
2026-07-01
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| Серія: | InfoMat |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1002/inf2.70138 |
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