PtTe2 interface engineering for enhanced near‐infrared photoresponse in black silicon photodetectors

Abstract Highly responsive near‐infrared (NIR) photodetectors (PDs) are increasingly required for advanced photoelectric systems. While silicon‐based detectors benefit from mature fabrication and CMOS compatibility, their performance is limited by the intrinsic bandgap of 1.12 eV, which leads to wea...

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Detalhes bibliográficos

Principais autores:	Guanyu Mi, Changbin Nie, Jintao Fu, Zeyu An, Xingzhan Wei, Weiyi Sun, Xilong Jiang, Jun Liu, Daqian Guo, Xueming Fan, Longcheng Que, Jian Lv, Jiang Wu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2026-07-01
Colecção:	InfoMat
Assuntos:	black silicon interface engineering near‐infrared photodetector PtTe2
Acesso em linha:	https://doi.org/10.1002/inf2.70138
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