Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network
Nowadays, the impact ionization coefficient in the avalanche breakdown theory is obtained using 1-D PN junctions or SBDs, and is considered to be a constant determined by the material itself only. In this paper, the impact ionization coefficient of silicon in a 2D lateral power device is found to be...
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| Autores principales: | , , , , , , , , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2023-02-01
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| Colección: | Micromachines |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2072-666X/14/3/522 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
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