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Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network

Nowadays, the impact ionization coefficient in the avalanche breakdown theory is obtained using 1-D PN junctions or SBDs, and is considered to be a constant determined by the material itself only. In this paper, the impact ionization coefficient of silicon in a 2D lateral power device is found to be...

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Autores principales: Jingyu Cui, Linglin Ma, Yuxian Shi, Jinan Zhang, Yuxiang Liang, Jun Zhang, Haidong Wang, Qing Yao, Haonan Lin, Mengyang Li, Jiafei Yao, Maolin Zhang, Jing Chen, Man Li, Yufeng Guo
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI AG 2023-02-01
Colección:Micromachines
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Acceso en línea:https://www.mdpi.com/2072-666X/14/3/522
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