Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics
Abstract Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , , , , |
|---|---|
| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Wiley-VCH
2024-02-01
|
| Цуврал: | Advanced Electronic Materials |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://doi.org/10.1002/aelm.202300621 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
|
