Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics

Abstract Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous...

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Autors principals:	Daobing Zeng, Rongxiang Ding, Guanyu Liu, Huihui Lu, Miao Zhang, Zhongying Xue, Ziao Tian, Zengfeng Di
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2024-02-01
Col·lecció:	Advanced Electronic Materials
Matèries:	floating gate memory MoS2 reconfigurable transistor rectification side gate
Accés en línia:	https://doi.org/10.1002/aelm.202300621
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