Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment
Abstract We investigate the metal-insulator-semiconductor contacts on n-Ge utilizing a ZnO interfacial layer (IL) to overcome the Fermi-level pinning (FLP) effect at metal/Ge interface and reduce the barrier height for electrons. A small conduction band offset of 0.22 eV at the interface between ZnO...
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| Автори: | , , , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
SpringerOpen
2018-08-01
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| Серія: | Nanoscale Research Letters |
| Предмети: | |
| Онлайн доступ: | http://link.springer.com/article/10.1186/s11671-018-2650-y |
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