Indium Silicon Oxide TFT Fully Photolithographically Processed for Circuit Integration
A new class of amorphous oxide semiconductors based on InO<sub>x</sub> doped with Ti, W or Si seems to show great promise for large area, flexible, electronics. Of particular interest is the In<sub>2</sub>O<sub>3</sub>:SiO<sub>2</sub> system as it has a relatively large bond dissociation energy, hen...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IEEE
2020-01-01
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| Col·lecció: | IEEE Journal of the Electron Devices Society |
| Matèries: | |
| Accés en línia: | https://ieeexplore.ieee.org/document/9170630/ |
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