Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOC...
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| Huvudupphov: | , , |
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| Materialtyp: | Artigo |
| Språk: | Inglês |
| Utgiven: |
Sumy State University
2011-01-01
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| Serie: | Журнал нано- та електронної фізики |
| Ämnen: | |
| Länkar: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_671-675.pdf |
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