High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer

With the ongoing development of electronic devices, there is an increasing demand for new semiconductors beyond traditional silicon. A key element in electronic circuits, complementary metal-oxide semiconductor (CMOS), utilizes both n-type and p-type semiconductors. While the advancements in n-type...

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Principais autores:	Seung-Min Lee, Seong Cheol Jang, Ji-Min Park, Jaewon Park, Nayoung Choi, Kwun-Bum Chung, Jung Woo Lee, Hyun-Suk Kim
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2025-03-01
coleção:	Nanomaterials
Assuntos:	p-type semiconductor tellurium high mobility metal-capping layer thin-film transistors
Acesso em linha:	https://www.mdpi.com/2079-4991/15/6/418
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