Design of Double-Gate Tri-Active Layer Channel Based IGZO Thin-Film Transistor for Improved Performance of Ultra-Low-Power RFID Rectifier
In a Radio Frequency Identification (RFID) circuit, the rectifier plays a vital role since it converts the received RF energy from a distant transmitter (reader) to power the entire RF circuit of the passive tag. The thin-film transistors have the potential to affect the rectifier circuit performanc...
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| Principais autores: | , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
IEEE
2020-01-01
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| Serier: | IEEE Access |
| Fag: | |
| Online adgang: | https://ieeexplore.ieee.org/document/9239948/ |
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