Reliability Enhancement of Oxide Thin‐Film Transistors via Suppression of a‐IGZO Protrusions for Improved Image Quality in LTPO AMOLED Displays

ABSTRACT We identify a new origin of oxide thin‐film transistor (TFT) instability and propose a process‐level approach to effectively overcome reliability‐induced degradation in low‐temperature polycrystalline silicon and oxide (LTPO) backplanes. Multi‐buffer protrusions originate from non‐uniform L...

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Principais autores:	Hyo Young Jun, Kunho Moon, Se Hwan Na, Nack Bong Choi, Sang Yoon Park, Hyun Jae Kim
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2026-06-01
coleção:	Advanced Electronic Materials
Assuntos:	active‐matrix organic light‐emitting diode amorphous indium‐gallium‐zinc‐oxide protrusion low‐temperature polycrystalline silicon and oxide oxide thin‐film transistors reliability test
Acesso em linha:	https://doi.org/10.1002/aelm.202500868
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