Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications
Abstract A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study. It is worth noting that the operating mode of a vertical heterojunction transistor can be switched from p‐type to ambipola...
Gorde:
| Egile Nagusiak: | , , , , |
|---|---|
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Wiley-VCH
2023-05-01
|
| Saila: | Advanced Electronic Materials |
| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.1002/aelm.202201203 |
| Etiketak: |
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|