Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Abstract A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study. It is worth noting that the operating mode of a vertical heterojunction transistor can be switched from p‐type to ambipola...

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Principais autores:	Tao Zhang, Yunze Liu, Fengzhi Wang, Xinhua Pan, Zhizhen Ye
Formato:	Artigo
Idioma:	Inglês
Publicado:	Wiley-VCH 2023-05-01
Series:	Advanced Electronic Materials
Assuntos:	complementary metal‐oxide‐semiconductor‐like inverters field effect transistors heterojunctions Schottky barrier tin monosulfide tin monoxide
Acceso en liña:	https://doi.org/10.1002/aelm.202201203
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