A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics

A Si/SiC heterojunction double-trench MOSFET with improved conduction characteristics is proposed. By replacing the N+ source and P-ch regions with silicon, the device forms a Si/SiC heterojunction that exhibits Schottky-like characteristics, effectively deactivating the parasitic PiN body diode and...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Yi Kang, Dong Liu, Tianci Li, Zhaofeng Qiu, Shan Lu, Xiarong Hu
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2025-11-01
Sarja:	Micromachines
Aiheet:	Si/SiC heterojunction heterojunction tunneling double trench MOSFET conduction characteristics bipolar degradation
Linkit:	https://www.mdpi.com/2072-666X/16/12/1335
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