Atomically Thin Amorphous Indium–Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors

High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. In this study, we demonstrate atomically thin indium–oxide (InO<i>_x</i>) semiconductors using a solutio...

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Hlavní autoři:	Jun-Hyeong Park, Won Park, Jeong-Hyeon Na, Jinuk Lee, Jun-Su Eun, Junhao Feng, Do-Kyung Kim, Jin-Hyuk Bae
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2023-09-01
Edice:	Nanomaterials
Témata:	amorphous oxide semiconductor thin-film transistors ultrathin channel high performance solution process
On-line přístup:	https://www.mdpi.com/2079-4991/13/18/2568
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