Lasing in strained germanium microbridges
Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum efficiency close to 100%.
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Nature Portfolio
2019-06-01
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| Rangatū: | Nature Communications |
| Urunga tuihono: | https://doi.org/10.1038/s41467-019-10655-6 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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