Low-threshold optically pumped lasing in highly strained germanium nanowires

Integrating group IV lasing devices into technologically relevant CMOS architectures has proven challenging. Here, the authors demonstrate low-threshold lasing, which is important for potential electronic and photonic circuits, using strained germanium nanowires as the gain material.

Dades bibliogràfiques

Autors principals:	Shuyu Bao, Daeik Kim, Chibuzo Onwukaeme, Shashank Gupta, Krishna Saraswat, Kwang Hong Lee, Yeji Kim, Dabin Min, Yongduck Jung, Haodong Qiu, Hong Wang, Eugene A. Fitzgerald, Chuan Seng Tan, Donguk Nam
Format:	Artigo
Idioma:	Inglês
Publicat:	Nature Portfolio 2017-11-01
Col·lecció:	Nature Communications
Accés en línia:	https://doi.org/10.1038/s41467-017-02026-w
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