Crystal orientation of epitaxial film deposited on silicon surface
Abstract Direct growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Thermodynamic stability of binary oxides is comprehensively investigated on Si substrates and shows possibility of chemical reaction of oxide mat...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Nature Portfolio
2024-05-01
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| Rangatū: | Scientific Reports |
| Urunga tuihono: | https://doi.org/10.1038/s41598-024-61564-8 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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