Crystal orientation of epitaxial film deposited on silicon surface

Abstract Direct growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Thermodynamic stability of binary oxides is comprehensively investigated on Si substrates and shows possibility of chemical reaction of oxide mat...

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Үндсэн зохиолчид:	Satoru Kaneko, Takashi Tokumasu, Manabu Yasui, Masahito Kurouchi, Daishi Shiojiri, Shigeo Yasuhara, Sumanta Kumar Sahoo, Musa Mutlu Can, Ruei Sung Yu, Kripasindhu Sardar, Masahiro Yoshimura, Masaki Azuma, Akifumi Matsuda, Mamoru Yoshimoto
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Nature Portfolio 2024-05-01
Цуврал:	Scientific Reports
Онлайн хандалт:	https://doi.org/10.1038/s41598-024-61564-8
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!