Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures
Abstract Van der Waals heterostructures offer unprecedented opportunities to design next stage functional electronic 2D devices. Most architectures of those devices incorporate large bandgap insulator – hBN as an encapsulating or tunnel barrier layers. Here, we use an architecture of gated vertical...
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| Principais autores: | , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Portfolio
2025-01-01
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| coleção: | npj 2D Materials and Applications |
| Acesso em linha: | https://doi.org/10.1038/s41699-025-00528-6 |
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