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Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method

Abstract With comprehensive crystal growth experiments of β‐(AlxGa1‐x)2O3 by the Czochralski method this work concludes a maximum [Al] = 40 mol% (35 mol% in the melt) that can be incorporated into β‐Ga2O3 crystal lattice while keeping single crystalline and monoclinic phase, resulting in the formula...

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Principais autores: Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Palvan Seyidov, Saud Bin Anooz, Roberts Blukis, Jana Rehm, Kornelius Tetzner, Mike Pietsch, Andrea Dittmar, Steffen Ganschow, Arub Akhtar, Thilo Remmele, Martin Albrecht, Tobias Schulz, Ta‐Shun Chou, Albert Kwasniewski, Manuela Suendermann, Thomas Schroeder, Matthias Bickermann
Formato: Artigo
Idioma:Inglês
Publicado em: Wiley-VCH 2025-01-01
coleção:Advanced Materials Interfaces
Assuntos:
bulk Î2‐(AlxGa1‐x)2O3 single crystal
Czochralski method
doping
physical properties
wafers
Acesso em linha:https://doi.org/10.1002/admi.202400122
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