Nano-scale Al redistribution at grain boundaries governs growth morphology in β-(AlxGa1-x)2O3 on sapphire substrate via MOCVD

Abstract Ultra-wide-bandgap β-Ga2O3 is a promising platform for next-generation deep-UV optoelectronics and high-power electronics. Here, we report controlled growth of β-(AlxGa1−x)2O3 epilayers on sapphire by metalorganic chemical vapor deposition with tunable trimethylaluminum supply (2.24 × 10−6–...

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Dettagli Bibliografici

Autori principali:	Chih Yang Huang, Filip Gucmann, Anoop Kumar Singh, Po-Hsun Chen, Chien-Nan Hsiao, Edmund Dobročka, Milan Ťapajna, Igor Píš, Matej Mičušík, Siddharth Rana, Dong-Sing Wuu, Po-Liang Liu, Kenneth Järrendahl, Ching-Lien Hsiao, Ray-Hua Horng
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Springer 2026-07-01
Serie:	Discover Nano
Soggetti:	Ultra-wide-bandgap β-(AlxGa1−x)2O3 MOCVD Atomic-resolution STEM First-principles
Accesso online:	https://doi.org/10.1186/s11671-026-04753-w
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