Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that...

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Detalhes bibliográficos

Principais autores:	Yu-Shyan Lin, Shin-Fu Lin
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2020-12-01
coleção:	Micromachines
Assuntos:	metallorganic chemical vapor deposition (MOCVD) passivation HfO<sub>2</sub> TiO<sub>2</sub> GaN high-electron mobility transistor (HEMT)
Acesso em linha:	https://www.mdpi.com/2072-666X/12/1/7
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