On the Baliga’s Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate
Abstract A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing the on-state resistance (R ON) and substrate pattern (SP) for enhancing the breakdown voltage (BV) is proposed in this work. By deliberately designing the width and height of the SP, the high concentr...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
SpringerOpen
2019-04-01
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| Col·lecció: | Nanoscale Research Letters |
| Matèries: | |
| Accés en línia: | http://link.springer.com/article/10.1186/s11671-019-2960-8 |
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