Development of GaN Technology-Based DC/DC Converter for Hybrid UAV

Wide band-gap (WBG) semiconductors technology represents a potential candidate to displace conventional silicon (Si) technology used in power electronics. Between Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors, the latter is the least mature of both technologies, with many open...

Full beskrivning

Bibliografiska uppgifter

Huvudupphov:	Juana M. Martinez-Heredia, Francisco Colodro, Jose Luis Mora-Jimenez, Alejandro Remujo, Joaquin Soriano, Sergio Esteban
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	IEEE 2020-01-01
Serie:	IEEE Access
Ämnen:	Aerospace electronics DC-DC power converters Gallium Nitride (GaN) transistors wide band-gap (WBG) semiconductors unmanned aerial vehicle (UAV)
Länkar:	https://ieeexplore.ieee.org/document/9087856/
Taggar:	Lägg till en tagg Inga taggar, Lägg till första taggen!