Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall Architecture

The recent technological trends toward miniaturization in lighting and display devices are accelerating the requirement for high-performance and small-scale GaN-based light-emitting diodes (LEDs). In this work, the effect of mesa size-reduction in the InGaN/GaN LEDs is systematically investigated in...

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Principais autores:	Yiping Zhang, Shunpeng Lu, Ying Qiu, Jing Wu, Menglong Zhang, Dongxiang Luo
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Frontiers Media S.A. 2021-01-01
coleção:	Frontiers in Chemistry
Assuntos:	GaN light-emitting diode miniaturization size effect micro-LED current crowding effect
Acesso em linha:	https://www.frontiersin.org/articles/10.3389/fchem.2020.630050/full
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