Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current–voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoep...

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Detalles Bibliográficos

Principais autores:	Moonsang Lee, Hyunkyu Lee, Keun Man Song, Jaekyun Kim
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2018-07-01
Series:	Nanomaterials
Assuntos:	InGaN/GaN LED freestanding GaN forward leakage current conduction mechanism tunneling
Acceso en liña:	http://www.mdpi.com/2079-4991/8/7/543
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