A novel method to determine the conduction channel effective width of split-gate AlGaN/GaN high electron mobility transistors
In this study, split-gate AlGaN/GaN high electron mobility transistors (HEMTs) with a hollow-gate structure were designed. The measurement and analysis of the samples showed that the influence of polarization Coulomb field scattering could be greatly weakened without changing the conduction channel...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , , , , |
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| التنسيق: | Artigo |
| اللغة: | Inglês |
| منشور في: |
AIP Publishing LLC
2025-11-01
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| سلاسل: | AIP Advances |
| الوصول للمادة أونلاين: | https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0304323/20800851/115223_1_5.0304323.pdf |
| الوسوم: |
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