Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors
Using a suitable dual-gate structure, the source-to-drain resistance (RSD) of AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with varying gate position has been studied at room temperature. The theoretical and experimental results have revealed a dependence of RSD on the gate position....
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| Główni autorzy: | , , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
AIP Publishing LLC
2017-08-01
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| Seria: | AIP Advances |
| Dostęp online: | http://dx.doi.org/10.1063/1.4999442 |
| Etykiety: |
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