Formation of a stable defects structure in silicon noise diodes
vThe possibilities and methods of creating a stable defective structure, including dislocation structure near the zones of p–n-transitions of silicon diodes of noise generators on plates with crystallographic orientations (111) and (001) have been investigated. The effective distribution control of...
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| Main Authors: | , , , |
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| Format: | Artigo |
| Language: | Russo |
| Published: |
National Academy of Sciences of Belarus
2021-07-01
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| Series: | Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук |
| Subjects: | |
| Online Access: | https://vestift.belnauka.by/jour/article/view/661 |
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