Formation of a stable defects structure in silicon noise diodes
vThe possibilities and methods of creating a stable defective structure, including dislocation structure near the zones of p–n-transitions of silicon diodes of noise generators on plates with crystallographic orientations (111) and (001) have been investigated. The effective distribution control of...
সংরক্ষণ করুন:
| প্রধান লেখক: | , , , |
|---|---|
| বিন্যাস: | Artigo |
| ভাষা: | Russo |
| প্রকাশিত: |
National Academy of Sciences of Belarus
2021-07-01
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| মালা: | Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук |
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://vestift.belnauka.by/jour/article/view/661 |
| ট্যাগগুলো: |
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