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The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors

We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes...

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Principais autores: Takashi Uchino, Greg N. Ayre, David C. Smith, John L. Hutchison, C. H. de Groot, Peter Ashburn
פורמט: Artigo
שפה:Inglês
יצא לאור: MDPI AG 2021-09-01
סדרה:Nanomaterials
נושאים:
carbon nanotube
field-effect transistors
hydrogen annealing
electron affinity
bandgap
גישה מקוונת:https://www.mdpi.com/2079-4991/11/10/2481
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