An ab Initio Calculations of Single-Electron Transistor Based Single Walled Carbon Nanotube of Ultra-Small Diameter

In this paper, we have investigated the charge stability diagram and conductance dependence on source drain bias and gate voltage of carbon nanotube based single electron transistor (SET) by using first principle calculations. All calculations have been executed by using ATK-VNL simulation package b...

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Opis bibliograficzny

Główni autorzy:	Sraja Chauhan, Ajay Singh Verma
Format:	Artigo
Język:	Inglês
Wydane:	V.N. Karazin Kharkiv National University Publishing 2020-04-01
Seria:	East European Journal of Physics
Hasła przedmiotowe:	single walled carbon nanotube single-electron transistor (set) electron affinity ionization energy addition energy charge stability diagram (csd)
Dostęp online:	https://periodicals.karazin.ua/eejp/article/view/15546
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