Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide
Abstract CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to res...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
SpringerOpen
2018-02-01
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| Col·lecció: | Nanoscale Research Letters |
| Matèries: | |
| Accés en línia: | http://link.springer.com/article/10.1186/s11671-018-2446-0 |
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