Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

Abstract CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to res...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Lin Jin, Long Wen, Li Liang, Qin Chen, Yunfei Sun
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	SpringerOpen 2018-02-01
Sarja:	Nanoscale Research Letters
Aiheet:	Surface plasmons Plasmonics Transparent conductor oxides Epsilon-near-zero
Linkit:	http://link.springer.com/article/10.1186/s11671-018-2446-0
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