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Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

In this work, a comprehensive study of the structural, chemical and electrophysical properties of monocrystalline silicon (Si) doped with ytterbium (Yb) has been carried out. The alloying was carried out by thermal diffusion at a temperature of 1473 K in high vacuum conditions followed by rapid cool...

Täydet tiedot

Tallennettuna:
Päätekijät: Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov, Mansur B. Bekmuratov, Shahriyor B. Norkulov, Ulugbek M. Yuldoshev
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: V.N. Karazin Kharkiv National University Publishing 2024-12-01
Sarja:East European Journal of Physics
Aiheet:
monocrystalline silicon
ytterbium doping
atomic force microscopy
raman spectroscopy
surface roughness
nanostructures
electrical properties
mds-structures
si-sio₂ interface
Linkit:https://periodicals.karazin.ua/eejp/article/view/24333
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