ScAlN-based HEMTs: Challenges and opportunities
The rapid advancement of wireless communication, radar technology, automotive electronics, and renewable energy systems necessitates semiconductor devices capable of operating at increasingly higher frequencies and power densities while maintaining reliability. GaN-based high-electron mobility trans...
I tiakina i:
| Ngā kaituhi matua: | , |
|---|---|
| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
AIP Publishing LLC
2025-06-01
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| Rangatū: | APL Electronic Devices |
| Urunga tuihono: | https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0272976/20562758/021507_1_5.0272976.pdf |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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