Temperature Dependence of Electron Leakage Current in InGaN Blue Light-Emitting Diode Structures
We investigated the temperature dependence of the electron leakage current in the AlGaN electron-blocking layer (EBL) of an InGaN/GaN blue light-emitting diode (LED) structure at temperatures between 20 and 100 °C. The percentage of electron leakage current was experimentally determined by fitting t...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
MDPI AG
2022-07-01
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| Σειρά: | Nanomaterials |
| Θέματα: | |
| Διαθέσιμο Online: | https://www.mdpi.com/2079-4991/12/14/2405 |
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