Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that opti...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2021-11-01
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| Col·lecció: | Crystals |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2073-4352/11/11/1335 |
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