Point Defect Influence on Electrical Conductivity of Semiconducting Ferroelectric AlScN

Aluminum scandium nitride (Al_1−xSc_xN) is a promising ferroelectric material for non-volatile random-access memory devices and electromechanical sensors. However, adverse effects on polarization from electrical leakage are a significant concern for this material. We observed tha...

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Bibliografiska uppgifter

Huvudupphov:	Xiaoman Zhang, Wangwang Xu, Bipin Bhattarai, Dominic A. Dalba, Dilan M. Gamachchi, Indeewari M. Karunarathne, Yue Yu, Nathan J. Pravda, Ruotian Gong, David Stalla, Chong Zu, W. J. Meng, Andrew C. Meng
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	MDPI AG 2025-12-01
Serie:	Ceramics
Ämnen:	AlScN ferroelectric leakage vacancy
Länkar:	https://www.mdpi.com/2571-6131/8/4/146
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