Modeling Self‐Rectifying Bipolar Resistive Switching Memory Through Machine Learning

ABSTRACT Resistive switching memory has emerged as a promising candidate for next‐generation data storage and is regarded as a key enabler for the advancement of artificial intelligence technologies. However, conventional resistive memory architectures face critical challenges, including sneak‐path...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Chen‐Fang Kang, Shih‐Min Huang, Yen‐Hsuan Chen, Jian‐Fu Tang, Po‐Kang Yang
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley-VCH 2026-01-01
Цуврал:	Advanced Physics Research
Нөхцлүүд:	polynomial regression Poisson‐Boltzmann formalism resistive switching memory Self‐rectifying sneak‐path currents
Онлайн хандалт:	https://doi.org/10.1002/apxr.202500116
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!