Modeling Self‐Rectifying Bipolar Resistive Switching Memory Through Machine Learning

ABSTRACT Resistive switching memory has emerged as a promising candidate for next‐generation data storage and is regarded as a key enabler for the advancement of artificial intelligence technologies. However, conventional resistive memory architectures face critical challenges, including sneak‐path...

Descrición completa

Detalles Bibliográficos

Principais autores:	Chen‐Fang Kang, Shih‐Min Huang, Yen‐Hsuan Chen, Jian‐Fu Tang, Po‐Kang Yang
Formato:	Artigo
Idioma:	Inglês
Publicado:	Wiley-VCH 2026-01-01
Series:	Advanced Physics Research
Assuntos:	polynomial regression Poisson‐Boltzmann formalism resistive switching memory Self‐rectifying sneak‐path currents
Acceso en liña:	https://doi.org/10.1002/apxr.202500116
Tags:	Engadir etiqueta Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!