Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations
This work investigates the behavior of fully depleted silicon-on-insulator (FD-SOI) Hall sensors with an emphasis on their physical parameters, namely the aspect ratio, doping concentration, and thicknesses. Via 3D-technology computer aided design (TCAD) simulations with a galvanomagnetic transport...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2020-05-01
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| coleção: | Sensors |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/1424-8220/20/10/2751 |
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