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Synaptic behaviour in ZnO–rGO composites thin film memristor

A zinc oxide (ZnO)–reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike‐timing‐dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circu...

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Autori principali: G.M. Khanal, S. Acciarito, G.C. Cardarilli, A. Chakraborty, L.D. Nunzio, R. Fazzolari, A. Cristini, M. Re, G. Susi
Natura: Artigo
Lingua:Inglês
Pubblicazione: Wiley 2017-03-01
Serie:Electronics Letters
Soggetti:
synaptic behaviour
composite thin film memristor
composite thin film memristive device
memristive‐resistive switching device
Hebbian learning rule
spike‐timing‐dependent plasticity
Accesso online:https://doi.org/10.1049/el.2016.3655
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