Electrostatic Field Effect Light-Emitting Diode
Gallium Nitride (GaN) based light-emitting diodes (LEDs) suffer from the persistent issue of high resistivity of the p-type layer, due to inefficient dopant activation at room temperature. Here, a novel Electrostatic Field Effect LED (EFELED) is demonstrated to solve this issue by introducing signif...
Salvato in:
| Autori principali: | , , |
|---|---|
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IEEE
2020-01-01
|
| Serie: | IEEE Photonics Journal |
| Soggetti: | |
| Accesso online: | https://ieeexplore.ieee.org/document/9086082/ |
| Tags: |
Nessun Tag, puoi essere il primo ad aggiungerne!!
|