Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mrow><m...

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Bibliografiske detaljer

Principais autores:	Artur Tuktamyshev, Stefano Vichi, Federico Guido Cesura, Alexey Fedorov, Giuseppe Carminati, Davide Lambardi, Jacopo Pedrini, Elisa Vitiello, Fabio Pezzoli, Sergio Bietti, Stefano Sanguinetti
Format:	Artigo
Sprog:	Inglês
Udgivet:	MDPI AG 2022-10-01
Serier:	Nanomaterials
Fag:	droplet epitaxy quantum dot metamorphic buffer layer strain relaxation III–V semiconductors
Online adgang:	https://www.mdpi.com/2079-4991/12/20/3571
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