Design and Investigation of InGaAs/InP/InAlAs MOSFET With Optimized Switching Efficiency

In this research, the DC performance of four InGaAs MOSFETs having different technology of 22nm, 14nm, 10nm, and 7nm with highly doped source and drain region is successfully examined. A high-performance MOSFET is designed as a large current of 12mA/<inline-formula> <tex-math notation="LaTeX">$\mu $...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Swastik Kumar Sahu, Kaushik Mazumdar, Kitmo, Yosef Berhan Jember, Sima Das
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IEEE 2024-01-01
Цуврал:	IEEE Access
Нөхцлүүд:	InGaAs InAlAs InAs MOSFETs nano-meter technology DC characteristics
Онлайн хандалт:	https://ieeexplore.ieee.org/document/10531709/
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!