3D Simulation for Melt Laser Anneal Integration in FinFET’s Contact
Process integration feasibility of UV nanosecond melt laser annealing (MLA) in 14 nm node generation FinFET's contact for dopant surface segregation and activation is assessed by using a 3D TCAD simulation tool. In a n-type source/drain (S/D) in-situ phosphorous doped epilayer, Sb ion implantation i...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
IEEE
2020-01-01
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| Serier: | IEEE Journal of the Electron Devices Society |
| Fag: | |
| Online adgang: | https://ieeexplore.ieee.org/document/9223740/ |
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