Hybrid Direct-Optimization Distributed Small-Signal Modeling of GaN HEMTs Toward Reliable mm-Wave Circuit Design
Operating Gallium Nitride (GaN) transistors at high frequencies, especially in the millimeter-wave (mm-Wave) range, introduces additional parasitic effects that significantly impact the RF characteristics of device. In such cases, a distributed-element model becomes essential. However, direct extrac...
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| Huvudupphov: | , , , |
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| Materialtyp: | Artigo |
| Språk: | Inglês |
| Utgiven: |
IEEE
2026-01-01
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| Serie: | IEEE Access |
| Ämnen: | |
| Länkar: | https://ieeexplore.ieee.org/document/11506375/ |
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