Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN2O3 Polycrystalline Ceramics
The thermoelectric power and Hall effect of Sn-or Ge-doped In2O3 ceramics are investigated based on a comparative study. The metal-type conductivity in both the samples occurs when the carrier concentration exceeds ~1019 cm-3. The carrier mobility is found to be higher for Ge-doped samples. The rela...
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| Principais autores: | , , , , |
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| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Wiley
1997-01-01
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| 叢編: | Active and Passive Electronic Components |
| 在線閱讀: | http://dx.doi.org/10.1155/1997/89056 |
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